SKM600GAE12E4 ? by semikron rev. 0.2 C 05.10.2016 1 semitrans ? 5 gae igbt4 modules engineering sample SKM600GAE12E4 target data features igbt4 = 4. generation medium fast trench igbt cal4f = soft switching 4. generation cal-diode enhanced 900a free-wheeling diode with integrated gate resistor isolated copper baseplate using dbc technology (direct bonded copper) ul recognized, file no. e63532 remarks case temperature limited to t c = 125c max recommended t op = -40 ... +150c product reliability results valid for t j = 150 absolute maximum ratings symbol conditions values unit igbtv ces t j =25c 1200 v i c t j = 175 c t c =25c 913 a t c =80c 702 a i cnom 600 a i crm i crm = 3xi cnom 1800 a v ges -20 ... 20 v t psc v cc = 800 v v ge 15 v v ces 1200 v t j =150c 10 s t j -40 ... 175 c inverse diode i f t j = 175 c t c =25c 54 a t c =80c 41 a i fnom 50 a i frm i frm = 2xi fnom 100 a i fsm t p = 10 ms, sin 180, t j =25c 180 a t j -40 ... 175 c freewheeling diode i f t j = 175 c t c =25c 936 a t c =80c 695 a i fnom 900 a i frm i frm = 2xi fnom 1800 a i fsm t p = 10 ms, sin 180, t j =25c 4320 a t j -40 ... 175 c module i t(rms) 500 a t stg -40 ... 125 c v isol ac sinus 50 hz, t = 1 min 2500 v characteristics symbol conditions min. typ. max. unit igbtv ce(sat) i c =600a v ge =15v chiplevel t j =25c 1.80 2.05 v t j =150c 2.20 2.42 v v ce0 chiplevel t j =25c 0.80 0.90 v t j =150c 0.70 0.80 v r ce v ge =15v chiplevel t j =25c 1.67 1.92 m t j =150c 2.5 2.7 m v ge(th) v ge =v ce , i c =24ma 5 5.8 6.5 v i ces v ge =0v v ce = 1200 v t j =25c 5m a t j =150c -m a c ies v ce =25v v ge =0v f=1mhz 37.2 nf c oes f=1mhz 2.32 nf c res f=1mhz 2.04 nf q g v ge = - 8 v...+ 15 v 3400 nc r gint t j =25c 1.3
SKM600GAE12E4 2 rev. 0.2 C 05.10.2016 ? by semikron t d(on) v cc = 600 v i c =600a v ge = +15/-15 v r g on =2 r g off =2 di/dt on = 6000 a/s di/dt off =5200a/s t j =150c 195 ns t r t j =150c 91 ns e on t j =150c 81 mj t d(off) t j =150c 695 ns t f t j =150c 131 ns e off t j =150c 83 mj r th(j-c) per igbt 0.049 k/w inverse diode v f = v ec i f =50a v ge =0v chiplevel t j =25c 2.41 2.74 v t j =150c 2.45 2.79 v v f0 chiplevel t j =25c 1.30 1.50 v t j =150c 0.90 1.10 v r f chiplevel t j =25c 22 25 m t j =150c 31 34 m i rrm i f =50a di/dt off =5500a/s v ge =15v v cc = 600 v t j =150c a q rr t j =150c c e rr t j =150c mj r th(j-c) per diode 1 k/w freewheeling diode v f = v ec i f = 900 a v ge =0v chiplevel t j =25c 2.14 2.46 v t j =150c 2.07 2.38 v v f0 chiplevel t j =25c 1.3 1.5 v t j =150c 0.9 1.1 v r f chiplevel t j =25c 0.93 1.07 m t j =150c 1.30 1.42 m i rrm i f = 600 a di/dt off =5500a/s v ge =15v v cc = 600 v t j =150c 384 a q rr t j =150c 83 c e rr t j =150c 47 mj r th(j-c) per diode 0.07 k/w module l ce 15 nh r cc'+ee' measured per switch t c =25c 0.18 m t c =125c 0.22 m r th(c-s) calculated without thermal coupling 0.02 0.038 k/w m s to heat sink m6 3 5 nm m t to terminals m6 2.5 5 nm nm w 310 g characteristics symbol conditions min. typ. max. unit semitrans ? 5 gae igbt4 modules engineering sample SKM600GAE12E4 target data features igbt4 = 4. generation medium fast trench igbt cal4f = soft switching 4. generation cal-diode enhanced 900a free-wheeling diode with integrated gate resistor isolated copper baseplate using dbc technology (direct bonded copper) ul recognized, file no. e63532 remarks case temperature limited to t c = 125c max recommended t op = -40 ... +150c product reliability results valid for t j = 150
SKM600GAE12E4 ? by semikron rev. 0.2 C 05.10.2016 3 fig. 1: typ. output characteristic, inclusive r cc'+ ee' fig. 2: rated current vs. temperature i c = f (t c ) fig. 3: typ. turn-on /-off energy = f (i c ) fig. 4: typ. turn-on /-off energy = f (r g ) fig. 5: typ. transfer characteristic fig. 6: typ. gate charge characteristic
SKM600GAE12E4 4 rev. 0.2 C 05.10.2016 ? by semikron fig. 7: typ. switching times vs. i c fig. 8: typ. switching ti mes vs. gate resistor r g fig. 9: transient thermal impedance fig. 10: typ. cal diode forward charact., incl. r cc'+ ee' fig. 11: cal diode peak reverse recovery current fig. 12: typ. cal diode peak reverse recovery charge
SKM600GAE12E4 ? by semikron rev. 0.2 C 05.10.2016 5 semitrans 5 gae
SKM600GAE12E4 6 rev. 0.2 C 05.10.2016 ? by semikron this is an electrostatic discharge sensitive device (esds), international standard iec 60747-1, chapter ix. *important information and warnings the specifications of semikron products may not be consid ered as guarantee or assurance of product characteristics ("beschaffenheitsgarantie"). the specifications of semikron products describe only the usual characteristics of products to be expected in typical applications, which may still vary depe nding on the specific application. therefore, products must be tested for the re spective application in advance. application adjustments may be necessary. the user of semikron products is responsible for the safety o f their applications embedding semikron pr oducts and must take adequate safety measures to prevent the applications from causing a phys ical injury, fire or other problem if any of semi kron products become faulty. the user is responsible to make su re that the applicat ion design is compliant with all applicable laws, regulati ons, norms and standards. exce pt as otherwise explicitly approved by semikron in a written document signed by authorized representatives of semikron, semikr on products may not be used in any applications where a failur e of the product or any consequences of the use thereof can reasonably be expected to result in person al injury. no representation o r warranty is given and no liability is assumed with respect to the accuracy, completeness and/or use of any information herein, including wi thout limitation, warranties of non-infringement of intellectual property rights of any third party. semikron does not assume any liability arisi ng out of the applications or use of any product; neither does it convey an y license under its patent rights, copyrights, trade secrets or ot her intellectual property rights, nor the rights of others. semikron makes no re presentation or warranty of non- infringement or alleged non-infr ingement of intellectual property rights of any third party which may arise fr om applications. due to technica l requirements our products m ay contain dangerous substances. for information on the types in question pl ease contact the nearest semikron sales office. this document supersedes and replaces all information previously supplied and ma y be superseded by updates. semikron reserves the right to ma ke changes. in accordance with the quality guidelines of semikron, we woul d like to point out that the products are engineering samples. th ese engineering samples are not yet produced under quality conditions approaching those of series production, and are at the presen t time not included in the semikron quality monitoring and control process. neither the product nor the prod uction process has to date gon e completely through the semikron internal authorization procedure. semikron may make any amendments without any prior notification. semikro n cannot and shall not promise or commit itself to release and/or make available a final version or series product after the deve lopment phase. semikron cannot and will not assume any responsibility with regard to freedom from defects, functionality, and adaptation to an d interaction with possible applications of the user or with regard to any other potential risks resulting from the use of engineering sample s. therefore semikron explicitly excludes any warranty an d liability; as far as legally possible. the customer shall fully indemnify and hol d harmless semikron from any and all risks, damages, lo sses, expenses and costs dire ctly or indirectly resultin g out of or in connection w ith the commissioning, operation, system integration, sale, dissemination or any other kind of use of engineering samples by the custom er and/or any third party, which has come into possession of engineering samples through or be cause of the customer. all know-how and all reg isterable and non-registerable copyrights an d industrial property rights arising from or in connection with these engineering samples rem ain the exclusive property of semikron.
|
